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Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, 26m Ω , Single EMH8
Features
http://onsemi.com
?
?
?
ON-resistance RDS(on)1 : 20m Ω (typ.)
1.8V drive
Protection diode in
?
?
Input Capacitance Ciss=1100pF(typ.)
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--20
±10
--6.5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (1200mm 2 × 0.8mm)
--26
1.5
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
Product & Package Information
? Package : EMH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
8
0.2
5
0.125
EMH1307-TL-H
Taping Type : TL
Marking
JG
TL
Lot No.
1
0.5
4
2.0
1 : Source
Electrical Connection
2 : Source
3 : Source
8
7
6
5
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7
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